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CdTe X-ray Sensing Driven by Electron Beam From Field Emitters
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ikeda, Yoshihiro Sakata, Takahide Morii, Hisashi Shiozawa, Katsuomi Neo, Yoichiro Aoki, Takao Mimura, Hidenori |
| Copyright Year | 2006 |
| Abstract | In this paper, a CdTe X-ray sensing device which consists of a CdTe pin diode and a field emitter is fabricated. The CdTe pin diode was fabricated by an excimer laser doping method, which was applied to form an n-type CdTe layer. An indium thin layer was evaporated on the p-type CdTe as a dopant material, and then an n-type CdTe layer was formed by irradiating a KrF laser to the dopant layer in a high-pressure Ar ambient. The field emitter used in this experiment was sputter-induced carbon nanoneedle field emitters. A positive bias voltage of ~200 V was applied to the n-region of the CdTe diode and output currents flowing were measured in the CdTe by supplying an electron beam on the p-region of the CdTe. The electron beam current supplied from the emitter was 10 muA. The output current is shown to be proportional to the X-ray tube current which is also proportional to the X-ray intensity. Also, output current is obtained only when the electron beam is irradiated |
| Starting Page | 395 |
| Ending Page | 396 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1116/1.2432356 |
| Alternate Webpage(s) | http://ir.lib.shizuoka.ac.jp/bitstream/10297/4070/1/091225003.pdf |
| Alternate Webpage(s) | https://doi.org/10.1116/1.2432356 |
| Journal | 2006 19th International Vacuum Nanoelectronics Conference |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
