Please wait, while we are loading the content...
| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jianjun Wang Sigen Wang Miraldo, P. Kun Hou Outlaw, R. Mingyao Zhu Xin Zhao Holloway, B.C. Tyler, T. Shenderova, O. Ray, M. Dalton, J. McGuire, G. |
| Copyright Year | 2006 |
| Description | Author affiliation: Coll. of William & Mary, Williamsburg, VA (Jianjun Wang; Sigen Wang; Miraldo, P.; Kun Hou; Outlaw, R.; Mingyao Zhu; Xin Zhao; Holloway, B.C.) |
| Abstract | Summary form only given. Field emission sources have distinct advantages such as short turn-on time, high power efficiency, low thermal signature, modulation control and the ability to be a variable current source that are desirable for high-current applications. However, scale-up of current density, device lifetime and device robustness has been limited to date. In this talk we present recent results using carbon nanosheets (CNS) as the field emission source in a high-current, back-gated device. Carbon nanosheets consist of free-standing graphene layers <2 nm thick which are oriented perpendicular to the growth surface. As field emission sources, nanosheets offer several potential benefits as compared to carbon nanotubes or other similar nanostructures. Nanosheets do not require a catalyst for growth and can be patterned after deposition using standard photolithography techniques. This is a distinct advantage compared to the cumbersome process of nanotube placement via catalyst patterning or the inefficient use of printed pastes which do not allow for vertically oriented structures. Second, nanosheets have as low, or lower, turn on field compared to nanotubes; threshold fields <1.0 V/mum (10 nA threshold) have been achieved. Third, in contrast to nanotube results previously published in the literature, nanosheets tend to self-condition to lower turn-on thresholds and increased stability after high-current field emission operation; nanosheet samples have produced over 23 mA of unsealed DC current, have operated in a continuous DC mode for over 5 hours, without failure, and produced over 1 mA of current in a pulsed mode (14% duty cycle >100 microamps, 3% at max current; 100 sec/cycle) 200 hours, again without failure. Furthermore, the sweep-to-sweep repeatability was remarkably high over the entire 200 hours and the standard deviation of the maximum current was <2.3% for all 7216 pulses. A novel back-gated device for high-current applications has been developed with nanosheets as the emission source. The device inherently eliminates arcing between the gate and the cathode and creates a much more open cathode configuration for better vacuum conductance and getter pumping. Furthermore, exact positioning of the CNS is not necessary and the device inherently allows for emission site burn out and turn-on of secondary sites. Electrostatic and electron trajectory modeling indicate that the devices should be capable of operation at current densities of >10 $mA/mm^{2}$ and internal modulation to GHz frequencies. Testing of prototype devices has produced upto 3.5 mA of current and lifetimes of over 20 hours. The primary device failure mode is dielectric breakdown due to Au diffusion. New Pt-based devices are under construction; testing results from these devices will also be presented |
| Starting Page | 403 |
| Ending Page | 403 |
| File Size | 180590 |
| Page Count | 1 |
| File Format | |
| ISBN | 1424404010 |
| DOI | 10.1109/IVNC.2006.335238 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-07-17 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Carbon dioxide Nanoscale devices Cathodes Current density Nanostructures Thermal variables control Robustness Carbon nanotubes Lithography Stability |
| Content Type | Text |
| Resource Type | Article |
National Digital Library of India (NDLI) is a virtual repository of learning resources which is not just a repository with search/browse facilities but provides a host of services for the learner community. It is sponsored and mentored by Ministry of Education, Government of India, through its National Mission on Education through Information and Communication Technology (NMEICT). Filtered and federated searching is employed to facilitate focused searching so that learners can find the right resource with least effort and in minimum time. NDLI provides user group-specific services such as Examination Preparatory for School and College students and job aspirants. Services for Researchers and general learners are also provided. NDLI is designed to hold content of any language and provides interface support for 10 most widely used Indian languages. It is built to provide support for all academic levels including researchers and life-long learners, all disciplines, all popular forms of access devices and differently-abled learners. It is designed to enable people to learn and prepare from best practices from all over the world and to facilitate researchers to perform inter-linked exploration from multiple sources. It is developed, operated and maintained from Indian Institute of Technology Kharagpur.
Learn more about this project from here.
NDLI is a conglomeration of freely available or institutionally contributed or donated or publisher managed contents. Almost all these contents are hosted and accessed from respective sources. The responsibility for authenticity, relevance, completeness, accuracy, reliability and suitability of these contents rests with the respective organization and NDLI has no responsibility or liability for these. Every effort is made to keep the NDLI portal up and running smoothly unless there are some unavoidable technical issues.
Ministry of Education, through its National Mission on Education through Information and Communication Technology (NMEICT), has sponsored and funded the National Digital Library of India (NDLI) project.
| Sl. | Authority | Responsibilities | Communication Details |
|---|---|---|---|
| 1 | Ministry of Education (GoI), Department of Higher Education |
Sanctioning Authority | https://www.education.gov.in/ict-initiatives |
| 2 | Indian Institute of Technology Kharagpur | Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project | https://www.iitkgp.ac.in |
| 3 | National Digital Library of India Office, Indian Institute of Technology Kharagpur | The administrative and infrastructural headquarters of the project | Dr. B. Sutradhar bsutra@ndl.gov.in |
| 4 | Project PI / Joint PI | Principal Investigator and Joint Principal Investigators of the project |
Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon |
| 5 | Website/Portal (Helpdesk) | Queries regarding NDLI and its services | support@ndl.gov.in |
| 6 | Contents and Copyright Issues | Queries related to content curation and copyright issues | content@ndl.gov.in |
| 7 | National Digital Library of India Club (NDLI Club) | Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach | clubsupport@ndl.gov.in |
| 8 | Digital Preservation Centre (DPC) | Assistance with digitizing and archiving copyright-free printed books | dpc@ndl.gov.in |
| 9 | IDR Setup or Support | Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops | idr@ndl.gov.in |
|
Loading...
|