NDLI: Thin film phosphor prepared by physical vapour deposition for FED application

Content Provider	IEEE Xplore Digital Library
Author	Yun Hi Lee Man Ho Song Byeong Kwon Ju Myung Hwan Oh
Copyright Year	1996
Description	Author affiliation: Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea (Yun Hi Lee)
Abstract	We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5nm thick Sn-doped In/sub 2/O/sub 3/ film. CL emission spectrum of sputtered ZnO:Zn(250 nm) film shows a two broad peaks centered around 540 nm and 600 nm. The spectra characteristic of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.
Starting Page	619
Ending Page	622
File Size	260479
Page Count	4
File Format	PDF
ISBN	0780335945
DOI	10.1109/IVMC.1996.601899
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-07-07
Publisher Place	Russia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sputtering Phosphors Chemical vapor deposition Conductive films Conductivity Threshold voltage Surface waves Indium tin oxide Zinc oxide Zinc compounds
Content Type	Text
Resource Type	Article

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