NDLI: Fabrication of high conductive ITO thin film for photovoltaic applications

Content Provider	IEEE Xplore Digital Library
Author	Xin Li Chaoyang Li Dapeng Wang Pradeep, C. Furuta, M. Hatta, A.
Copyright Year	2013
Description	Author affiliation: Environ. Eng. Dept., Kochi Univ. of Technol., Kami, Japan (Dapeng Wang; Furuta, M.) \|\| Inst. for Nanotechnol., Kochi Univ. of Technol., Kami, Japan (Xin Li; Chaoyang Li; Pradeep, C.; Hatta, A.)
Abstract	High conductive and transparent ITO thin films were deposited on the alkali free glass with different thickness by DC sputtering. The thickness effects on the structural, electrical and optical properties of ITO films were investigated. It was found that the surface morphology and roughness were remarkably influenced by the film thickness. The roughness of the thin films increased with the film thickness increased, and the lowest roughness of 0.501nm was observed from 100 nm-thickness ITO thin film. In contrast, the resistivity and hall mobility were increased with the thickness increase of the ITO films. The lowest resistivity of 1.303 Ω cm and the highest Hall mobility of 29.2 $cm^{2}/V$ s were obtained from 400nm-thickness ITO film. The average transmittance of all the ITO films was above 85% in the visible light spectrum.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	177
Ending Page	180
File Size	1104499
Page Count	4
File Format	PDF
ISBN	9784863483095
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-07-02
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	JSAP
Subject Keyword	Films Indium tin oxide Surface morphology Glass Conductivity Zinc oxide Hall effect
Content Type	Text
Resource Type	Article

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