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Content Provider | IEEE Xplore Digital Library |
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Author | Byeong Kwon Ju Seong-Jin Kim Yun Hi Lee Beom Soo Park Young-Joon Baik Sungkyoo Lim Myung Hwan Oh |
Copyright Year | 1996 |
Description | Author affiliation: Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea (Byeong Kwon Ju) |
Abstract | Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 A was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 /spl mu/A and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 /spl mu/A and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films. |
Starting Page | 530 |
Ending Page | 533 |
File Size | 230935 |
Page Count | 4 |
File Format | |
ISBN | 0780335945 |
DOI | 10.1109/IVMC.1996.601880 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1996-07-07 |
Publisher Place | Russia |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Field emitter arrays Silicon Current measurement Etching Raman scattering Spectroscopy Substrates Threshold voltage Low voltage Electrons |
Content Type | Text |
Resource Type | Article |
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