NDLI: Gated p-Si field emitter arrays for sensor applications

Content Provider	IEEE Xplore Digital Library
Author	Prommesberger, C. Langer, C. Lawrowski, R. Dams, F. Schreiner, R.
Copyright Year	2015
Description	Author affiliation: Fac. of Gen. Sci. & Microsyst. Technol., OTH Regensburg, Regensburg, Germany (Prommesberger, C.; Langer, C.; Lawrowski, R.; Dams, F.; Schreiner, R.)
Abstract	We report on gated p-type Si-tip array cathodes for implementation into field emission electron sources for sensor applications. Arrays of 16 and 100 tips with tip heights of 3 μm and tip radii below 30 nm with integrated gate electrodes concentrically positioned 2 μm below the tip apexes were fabricated using an improved process, which leads to an enhanced isolation layer quality with sufficient breakdown field strengths and low leakage currents. Integral measurements with a fixed grid potential of 400 V showed emission currents up to 35 μA for 100 tips at a cathode voltage of 150 V and an almost negligible parasitic gate current. The array with 16 p-type Si-tips showed a significant stabilization of the emission current in the range of 0.3 - 0.4 μA, for cathode voltages between 90 V and 150 V. The current fluctuation in this saturation regime was measured for 10 minutes and a value of less than ± 1% was observed. No degradation of the cathode was found after 6 hours of operation at a constant cathode voltage of 100 V and a constant grid voltage of 400 V.
Starting Page	164
Ending Page	165
File Size	299512
Page Count	2
File Format	PDF
ISBN	9781467393560
e-ISBN	9781467393577
DOI	10.1109/IVNC.2015.7225567
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-07-13
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cathodes Logic gates Current measurement Silicon Semiconductor device measurement Iron current stabilization field emission semiconductor silicon tip array integrated gate-electrode
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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