NDLI: High thermal conductivity, lossy aluminum nitride dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Savrun, E. Abe, D.
Copyright Year	2000
Description	Author affiliation: Sienna Technol. Inc., Woodinville, WA, USA (Savrun, E.)
Abstract	Sienna Technologies, Inc., has successfully demonstrated that high thermal conductivity of aluminum nitride (AlN) can be alloyed or composited to increase its microwave losses without significant reduction in thermal conductivity to substitute for BeO-SiC composites in microwave tubes. Doped AlN and AlN composites were fabricated and their thermal conductivities and complex permittivities from 9 GHz to 12 GHz were measured and compared to those of BeO-SiC composites. AlN composites displayed the same loss tangent (0.455 at 9 GHz, and 0.588 at 12 GHz) and a comparable thermal conductivity (l05 W/m.K) as the 60BeO-40SiC composite (0.493 at 9 GHz, and 0.587 at 12 GHz). Doped AlN had a loss tangent of between 0.37 and 0.75 at 12 GHz with a dielectric constant of between 19 and 37, depending on dopant concentration. The thermal conductivity of doped AlN (150 W/m.K) was higher than that of 60BeO-40SiC composite (130 W/m.K).
File Size	475452
File Format	PDF
ISBN	0780359879
DOI	10.1109/OVE:EC.2000.847520
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-05-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal conductivity Dielectric losses Aluminum nitride Microstructure Shape Permittivity Silicon carbide Anisotropic magnetoresistance Laboratories Microwave technology
Content Type	Text
Resource Type	Article

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