NDLI: Annealing amorphous GaN - a way to nano-crystalline state

Content Provider	IEEE Xplore Digital Library
Author	Grigorescu, C.E.A. Lee, H.K. Lanke, U.D. Koo, A.B.A. Ruck, B.J. Monnereau, O. Notonier, R. Tonetto, A. Trodahl, H.J.
Copyright Year	2003
Description	Author affiliation: Nat. Inst. R&D Optoelectronics, Bucharest, Romania (Grigorescu, C.E.A.)
Abstract	The effects of thermal annealing on structural and optical properties of amorphous GaN thin films obtained by Ion Assisted Deposition (IAD) have been investigated. Thermal annealing. was carried out in flowing nitrogen and respectively under water vapour pressure (1.7-2.4 torr), at temperatures up to 800/spl deg/C. From SEM observations of the annealing processes in real time it appears that formation of nano-crystallites in the amorphous environment occurs at about 400/spl deg/C. XRD and Raman scattering performed on the annealed films prove the presence of nano-crystallites (2-4 nm). Optical measurements show a weak absorption edge in the as prepared film, and the deepening edge and reduced sub-band absorption after annealing.
Sponsorship	Ministr. Infrastructure & State Committee for Sci. Res
Starting Page	337
Ending Page	339
File Size	171795
Page Count	3
File Format	PDF
ISBN	0780378164
DOI	10.1109/ICTON.2003.1264649
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-06-29
Publisher Place	Poland
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Amorphous materials Gallium nitride Optical films Optical scattering Absorption Particle beam optics Sputtering Nitrogen Temperature
Content Type	Text
Resource Type	Article

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