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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Cook, B.A. Meisner, G.P. Yang, J. Uher, C. |
| Copyright Year | 1999 |
| Description | Author affiliation: Iowa State Univ., Ames, IA, USA (Cook, B.A.) |
| Abstract | The high temperature transport properties in a series of intermetallic half-Heusler alloys of the form MNiSn, where M=Zr, Hf, have been examined. The semiconducting nature of these materials due to the formation of a pseudo-gap in the density of states make them promising candidates for intermediate temperature thermoelectric applications. Samples of pure and Sb-doped ZrNiSn, HfNiSn, and (Zr-Hf)NiSn were prepared by arc melting and homogenized by heat treatment. Phase purity was determined by X-ray diffraction and the microstructures were examined by scanning electron microscopy. The temperature dependence of the electrical resistivity and Seebeck coefficient of these samples was characterized between 300 K and 1050 K. At room temperature, the data match closely with the results recently reported by us. The thermopower initially increases with temperature, exhibits a broad maximum between 400 K and 600 K, and decreases to a common value, characteristic of the magnitude of the forbidden gap. The electrical resistivity decreases with temperature following a T/sup -1/ dependence. A correlation between the magnitude of the thermopower and the Hf/Zr ratio was observed. An estimate of the magnitude of the gap was made from a plot of 1n(/spl sigma/) versus reciprocal temperature, giving a value of 0.21 eV which is in good agreement with previous estimates. The effects of antimony and bismuth doping on the electrical properties are discussed. |
| Starting Page | 64 |
| Ending Page | 67 |
| File Size | 424868 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780354516 |
| ISSN | 10942734 |
| DOI | 10.1109/ICT.1999.843335 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1999-08-29 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermoelectricity Hafnium Temperature dependence Electric resistance Intermetallic Semiconductivity Semiconductor materials Heat treatment X-ray diffraction Microstructure |
| Content Type | Text |
| Resource Type | Article |
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