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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yunki Kim Sunglae Cho DiVenere, A. Wong, G.K. Ketterson, J.B. |
| Copyright Year | 1999 |
| Description | Author affiliation: Dept. of Phys. & Astron., Northwestern Univ., Evanston, IL, USA (Yunki Kim) |
| Abstract | We have grown Sb/sub 2/Te/sub 3/ thin films on CdTe[111]B and GaAs[111]B substrates by the conventional co-deposition method using molecular beam epitaxy. In order to investigate and reduce the antisite defects, we varied the relative ratio of the flow-rates of Sb and Te. X-ray diffraction patterns (/spl theta/-2/spl theta/ scans) of the films show that they are well aligned with their (00.1) axis normal to the substrates, regardless of the relative flow-rate ratio. The measurement of the rocking curves of the films shows that they are of high quality, despite a rather large lattice mismatch between the substrate and the film deposited at 200/spl deg/C, with a rocking curve FWHM less than 0.17/spl deg/. The change in the relative flow-rate ratios of Te to Sb causes a remarkable shift in the temperature-dependent thermopower, resistivity, and Hall coefficient of the films. These results demonstrate that by controlling the antisite defects, Sb/sub 2/Se/sub 3/ can be a promising thermoelectric material. |
| Starting Page | 700 |
| Ending Page | 703 |
| File Size | 374630 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780354516 |
| ISSN | 10942734 |
| DOI | 10.1109/ICT.1999.843482 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1999-08-29 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Tellurium Transistors Substrates Temperature X-ray scattering X-ray diffraction Thermoelectricity Lattices Molecular beam epitaxial growth Etching |
| Content Type | Text |
| Resource Type | Article |
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