NDLI: Program Disturb Phenomenon by DIBL in MLC NAND Flash Device

Content Provider	IEEE Xplore Digital Library
Author	Dongyean Oh Seungchul Lee Changsub Lee Jaihyuk Song Woonkyung Lee Jeonghyuk Choi
Copyright Year	2008
Description	Author affiliation: Flash Memory Bus., Samsung Electron. Co., Ltd., Yongin (Dongyean Oh; Seungchul Lee; Changsub Lee; Jaihyuk Song; Woonkyung Lee; Jeonghyuk Choi)
Abstract	We have investigated a new program disturb phenomenon by DIBL (drain-induced barrier lowering) in MLC NAND Flash device. It is found that lower programmed state cell shows large DIBL effect and its BVdss measurement results in unwanted programming of nearby erased state cells. It is attributed to punch-through leakage of programmed state cell during BVdss measurement. Electrons from this leakage are accelerated by high drain bias, which leads to hot carrier programming. The results indicate that excessive boosted channel potential by local self-boosting scheme creates 'DIBL induced program disturb' by punch-through of channel cut-off cell. This paper suggests that excessive boosted channel potential should be controlled in short channel device for high density MLC NAND Flash operation.
Starting Page	5
Ending Page	7
File Size	527789
Page Count	3
File Format	PDF
ISBN	9781424415465
DOI	10.1109/NVSMW.2008.7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-18
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Acceleration Hot carrier injection Flash memory Hot carriers Variable structure systems Leakage current Threshold voltage
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current

A New Read-Disturb Failure Mechanism Caused by Boosting Hot-Carrier Injection Effect in MLC NAND Flash Memory

Accurate and efficient physical simulation of program disturb in scaled NAND flash memories

DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery

Drain-accelerated degradation of tunnel oxides in Flash memories

Novel negative Vt shift program disturb phenomena in 2X∼3X nm NAND flash memory cells

A New Read Method by Using DIBL Characteristics in Nitride Storage Device

Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase

Program Disturb Phenomenon by DIBL in MLC NAND Flash Device

Similar Documents

A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current

A New Read-Disturb Failure Mechanism Caused by Boosting Hot-Carrier Injection Effect in MLC NAND Flash Memory

Accurate and efficient physical simulation of program disturb in scaled NAND flash memories

DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

Read Disturb Errors in MLC NAND Flash Memory: Characterization, Mitigation, and Recovery

Drain-accelerated degradation of tunnel oxides in Flash memories

Novel negative Vt shift program disturb phenomena in 2X∼3X nm NAND flash memory cells

A New Read Method by Using DIBL Characteristics in Nitride Storage Device

Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase

Program Disturb Phenomenon by DIBL in MLC NAND Flash Device