NDLI: SEE characterization and mitigation in ultra-deep submicron technologies

Content Provider	IEEE Xplore Digital Library
Author	Mavis, D.G. Eaton, P.H. Sibley, M.D.
Copyright Year	2009
Description	Author affiliation: Microelectronics Research Development Corporation, 8102 Menaul Blvd. NE, Albuquerque, NM 87110 USA (Mavis, D.G.; Eaton, P.H.; Sibley, M.D.)
Abstract	As technology feature sizes decrease, single event upset (SEU), digital single event transient (DSET), and multiple bit upset (MBU) effects dominate the radiation response of microcircuits in space applications. Even in high-altitude and terrestrial applications, cosmic-ray neutron recoil byproducts can easily produce an unacceptable soft error rate (SER) in modern microcircuits. Process modifications and engineered substrate attempts have not provided significant levels of SEE (single event effect) mitigation. Circuit-level hardening approaches have, however, proven effective in mitigating all heavy-ion related effects. The size and speed penalties associated with these circuit hardening techniques often cannot be tolerated in commercial product designs. For this reason, experimental SEE characterization is necessary to identify dominant response mechanisms so that critical circuits can be identified and hardened with minimal impact on overall IC performance and permit the most effective trade-off between SER and the area/speed overhead. For complex designs, conventional broad-beam testing provides limited data to isolate the exact cause of observed errors and little insight into potential design improvements. We report on our new Milli-Beam™ test hardware and associated data acquisition software that provide rapid SER raster scanning with spatial isolation as small as 10 microns to physically isolate dominant circuit susceptibilities of complex modern microcircuits.
Starting Page	105
Ending Page	112
File Size	841205
Page Count	8
File Format	PDF
ISBN	9781424429332
e-ISBN	9781424429349
DOI	10.1109/ICICDT.2009.5166276
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Space technology Circuit testing Single event upset Neutrons Error analysis Radiation hardening Product design Software testing Hardware Data acquisition Milli-Beam Heavy-ion testing single bit upset multiple bit upset single event effects single event transient
Content Type	Text
Resource Type	Article

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