NDLI: Recent advances in RF-LDMOS high-power IC development

Content Provider	IEEE Xplore Digital Library
Author	Burger, W.R.
Copyright Year	2009
Description	Author affiliation: RF Division; RF, Analog, and Sensors Group, Freescale Semiconductor, 2100 E. Elliot Rd, Tempe, AZ 85284, USA (Burger, W.R.)
Abstract	RF-LDMOS is the dominant RF power device technology in the infrastructure market from Cellular through WiMAX frequencies. High performance, low cost, and excellent reliability are just a few of the factors responsible for this dominant position. Base station suppliers and their customers continue to demand improvements in system efficiency while simultaneously providing lower cost solutions. RF-LDMOS continues to evolve to meet these demanding requirements. One key evolution that provides improved performance while lowering cost is the introduction of high power RFICs. By combining high Q integrated passives with RF-LDMOS device technology, multi-stage, high-power (≫100W) devices can be realized that offer superior performance and lower cost than the corresponding discrete transistor implementation can provide, with similar if not superior reliability. This paper will review recent RF-LDMOS high-power IC developments.
Starting Page	35
Ending Page	38
File Size	2042554
Page Count	4
File Format	PDF
ISBN	9781424429332
e-ISBN	9781424429349
DOI	10.1109/ICICDT.2009.5166259
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-18
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Costs Radio frequency WiMAX Power system reliability Base stations Radiofrequency integrated circuits
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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RF LDMOS Power Amplifier Integrated Circuits for Cellular Wireless Base Station Applications

A family of 20 W linear driver ICs for RF high power amplifiers

A trench gate LDMOS for RF applications

2.5-GHz fully-integrated WiMAX transceiver IC for a compact, low-power-consumption RF module

RF LDMOS Power Amplifier Integrated Circuit for W-CDMA/TD-SCDMA applications

Punch-through Effects in RF Bulk LDMOS Transistors

High power integration for RF infrastructure power amplifiers

A novel high voltage RF vertical MOSFET for high power applications

Application of aluminium metallisation in ldmos RF power applications

Recent advances in RF-LDMOS high-power IC development

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