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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shabani, P. Ganji, J. |
| Copyright Year | 2009 |
| Description | Author affiliation: Islamic Azad University of Mahshahr, Mahshahr, Iran (Ganji, J.) || Electrical Engineering Department, Shahid Chamran University, Ahvaz, Iran (Shabani, P.) |
| Abstract | In this paper we present a novel nano structure quantum well voltage regulator (QWVR) to regulate a voltage in very low voltages, that can be used in low voltage and low power IC's. This structure is based on the double electron layer tunneling transistor (DELTT). We used the depletion mode MOSFET in series with the DELTT and before it to eliminate higher states of resonant tunneling current. Simulation results show that the voltage regulation is occurred around 0.3v. A desired regulated voltage is obtained with a specific value of the thickness and the concenturation of the GaAs and the AlGaAs epilayers. To simulating the proposed structure, the stationary viscous quantum hydrodynamic model has been used. |
| Starting Page | 88 |
| Ending Page | 91 |
| File Size | 3310699 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424428380 |
| DOI | 10.1109/SCED.2009.4800437 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-02-11 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Regulators Electrons Resonant tunneling devices Contacts Low voltage MOSFET circuits Voltage control Resonance Gallium arsenide Hydrodynamics |
| Content Type | Text |
| Resource Type | Article |
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