NDLI: High Quality Ti-Implanted Si Layers Above Solid Solubility Limit

Content Provider	IEEE Xplore Digital Library
Author	Olea, J. Pastor, D. Toledano-Luque, M. San-Andres, E. Martil, I. Gonzalez-Diaz, G.
Copyright Year	2009
Description	Author affiliation: Dpto. de Física Aplicada III (Electricidad y Electrónica). Facultad de Ciencias Físicas. Universidad, Complutense de Madrid. E-28040 Madrid. Spain (Olea, J.; Pastor, D.; Toledano-Luque, M.; San-Andres, E.; Martil, I.; Gonzalez-Diaz, G.)
Abstract	In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed. Time-of-Flight Secondary Ion Mass Spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM) measurements prove that good crystallinity can be achieved over solid solubility limit. Hall effect characterization points out a high electrical activation and high mobility in all samples.
Starting Page	38
Ending Page	41
File Size	5087819
Page Count	4
File Format	PDF
ISBN	9781424428380
DOI	10.1109/SCED.2009.4800424
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-02-11
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Solids Annealing Ion implantation Photovoltaic cells X-ray diffraction Lattices Pulse measurements Transmission electron microscopy Mass spectroscopy Impurities
Content Type	Text
Resource Type	Article

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