NDLI: Noise study in photodiodes based on InGaN/GaN MQW

Content Provider	IEEE Xplore Digital Library
Author	Navarro, A. Rivera, C. Cuerdo, R. Pau, J.L. Pereiro, J. Calle, F. Muoz, E.
Copyright Year	2007
Description	Author affiliation: Univ. Politecnica de Madrid, Madrid (Navarro, A.; Rivera, C.; Cuerdo, R.; Pau, J.L.; Pereiro, J.; Calle, F.; Muoz, E.)
Abstract	The low frequency noise characteristics of InGaN/GaN multiple-quantum-well (MQW) P-I-N photodiodes have been studied. 1/f noise has been measured for two different In contents, under different reverse bias voltages and variable temperatures from 25 K to 623 K. Multilevel random telegraph signal (RTS) noise was found in several samples. The spectral response was measured in photovoltaic and biased mode. Specific detectivity was evaluated at various reverse voltages at temperatures up to 300degC. InGaN/GaN MQW photodiodes have been demonstrated to be a viable alternative for high temperature operation.
Starting Page	321
Ending Page	324
File Size	1406363
Page Count	4
File Format	PDF
ISBN	1424408687
DOI	10.1109/SCED.2007.384058
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-31
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Quantum well devices Low-frequency noise Temperature Voltage PIN photodiodes Frequency measurement Noise measurement Telegraphy Photovoltaic systems ultraviolet detectors High-temperature III-Nitrides noise measurement quantum well devices
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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