NDLI: Physics based models for process optimization

Content Provider	IEEE Xplore Digital Library
Author	Pelaz, L. Marques, L.A. Aboy, M. Lopez, P. Santos, I.
Copyright Year	2007
Description	Author affiliation: Univ. de Valladolid, Valladolid (Pelaz, L.; Marques, L.A.; Aboy, M.; Lopez, P.; Santos, I.)
Abstract	The shrinking of Si device dimensions has revealed the need of detailed atomistic models to gain better understanding of physical mechanisms involved in device fabrication as a way for process optimization. Our atomistic model for amorphization based on the accumulation of bond defects captures the sensitivity of defect accumulation to implant parameters, such as wafer temperature or flux. These parameters affect the width of amorphous layers formed by ion implantation and, as a result, the residual damage that remains beyond the amorphous/crystalline interface after solid phase epitaxial regrowth at low temperature. During additional higher temperature anneals, Si interstitials from the end of range are injected and cause B deactivation through the growth of preexisting B clusters in the regrown amorphous layer. The presence of impurities, such as F or C acting as Si interstitial traps, may prevent Si interstitials from reaching B atoms, and thus, the undesirable enhanced B diffusion and deactivation.
Starting Page	5
Ending Page	8
File Size	2059800
Page Count	4
File Format	PDF
ISBN	1424408687
DOI	10.1109/SCED.2007.383983
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-31
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Physics Amorphous materials Semiconductor device modeling Atomic layer deposition Temperature sensors Fabrication Wafer bonding Implants Ion implantation Crystallization Silicon Dopant diffusion Modeling
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
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9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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