NDLI: Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs

Content Provider	IEEE Xplore Digital Library
Author	Chao Shen Tien Khee Ng Ooi, B.S. Dongkyu Cha
Copyright Year	2013
Description	Author affiliation: Photonics Lab., King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia (Chao Shen; Tien Khee Ng; Ooi, B.S.) \|\| Adv. Nanofabrication Imaging & Characterization Lab. (ANIC), King Abdullah Univ. of Sci. & Technol., Thuwal, Saudi Arabia (Dongkyu Cha)
Abstract	Micro-structured group-III-nitrides are considered as promising strain relief structures for high efficiency solid state lighting. In this work, the strain field in InGaN/GaN multiquantum wells (MQWs) micro-pillars is investigated using micro-Raman spectroscopy and the design of micro-pillars were studied experimentally. We distinguished the strained and strain-relieved signatures of the GaN layer from the $E_{2}$ phonon peak split from the Raman scattering signatures at 572 $cm^{-1}$ and 568 $cm^{-1},$ respectively. The extent of strain relief is examined considering the height and size of micro-pillars fabricated using focused ion beam (FIB) micro-machining technique. A significant strain relief can be achieved when one micro-machined through the entire epi-layers, 3 μm in our study. The dependence of strain relief on micro-pillar diameter (D) suggested that micro-pillar with D <; 3 μm showed high degree of strain relief. Our results shed new insights into designing strain-relieved InGaN/GaN microstructures for high brightness light emitting diode arrays.
Sponsorship	IEEE Western Saudi Arabia Sect.
Starting Page	1
Ending Page	3
File Size	801948
Page Count	3
File Format	PDF
ISBN	9781467361965
e-ISBN	9781467361958
e-ISBN	9781467361941
DOI	10.1109/SIECPC.2013.6550773
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-04-27
Publisher Place	Greece
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micro-pillar Raman scattering Measurement by laser beam Strain relief Light emitting diodes Epitaxial growth InGaN/GaN quantum well Gallium nitride Quantum well devices Strain
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

InGaN micro-LED-pillar as the building block for high brightness emitters

Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes

InGaN/GaN MQW LEDs with Si treatment

The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes

InGaN/GaN nanorod and nanosheet arrays for InGaN-based LEDs

Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs

Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs

Similar Documents

400nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes

InGaN micro-LED-pillar as the building block for high brightness emitters

Investigation of InGaN/GaN multiple quantum wells with strain relief behavior for light-emitting diodes

InGaN/GaN MQW LEDs with Si treatment

The ESD protection improved by combining InGaN/GaN MQW LEDs with GaN Schottky diodes

InGaN/GaN nanorod and nanosheet arrays for InGaN-based LEDs

Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs

Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?

Strain relief InGaN/GaN MQW micro-pillars for high brightness LEDs