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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Casals, O. Hernandez-Ramirez, F. Barcones, B. Romano-Rodriguez, A. Serre, C. Perez-Rodriguez, A. Morante, J.R. Godignon, P. Montserrat, J. Millan, J. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Electron., Barcelona Univ., Spain (Casals, O.; Hernandez-Ramirez, F.; Barcones, B.; Romano-Rodriguez, A.; Serre, C.; Perez-Rodriguez, A.; Morante, J.R.) |
| Abstract | The behaviour as high temperature gas sensors of MOS capacitors and tunnel MOS diodes with Pt/TaSi/sub x/ catalytic gates fabricated on 6H-SiC substrates is presented. The electrical characterization of the both types of devices as a function of the operating temperature and in the presence of gases CO, NO/sub 2/ and C/sub 3/H/sub 8/ has been performed. The best results have been obtained for MOS capacitors after their annealing in alternate pulses of 1% C/sub 3/H/sub 8/ and 1% O/sub 2/ at temperatures between 300 and 500/spl deg/C. Their maximum response has been 80 mV to 1000 ppm of CO at 250/spl deg/C and 71 mV to 10 ppm of NO/sub 2/ at 310/spl deg/C. On the other hand, the tunnel MOS diodes show worse sensitive to these gases, with a maximum response of 1 mV to 1000 ppm of CO at 250/spl deg/C and 600 /spl mu/V to 10 ppm of NO/sub 2/ at 310/spl deg/C. |
| Sponsorship | Ministerio de Educacion y Ciencia Generalitat de Catalunya Diputacio de Tarragona Red IberNAM LEAR Corp. "La Caixa" Universitat Rovira i Virgili IEEE |
| Starting Page | 533 |
| Ending Page | 536 |
| File Size | 736862 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780388100 |
| DOI | 10.1109/SCED.2005.1504507 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-02-02 |
| Publisher Place | Spain |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gas detectors Diodes Gases MOS capacitors Temperature sensors Silicon carbide Fabrication Voltage Annealing MOS devices |
| Content Type | Text |
| Resource Type | Article |
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