NDLI: The crystalline effect of the of the β-FeSi film using two types target prepared by pulsed laser deposition

Content Provider	IEEE Xplore Digital Library
Author	Zakir Hossain, M. Katsumata, H. Uekusa, S.
Copyright Year	2010
Description	Author affiliation: Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan (Zakir Hossain, M.; Katsumata, H.; Uekusa, S.)
Abstract	Ecological friendly semiconducting silicide β-FeSi thin film has been formed on FZ-Si (111) substrates using sintering FeSi (purity 99.99%) and electrolytic Fe (purity 99.99%) targets by pulsed laser deposition (PLD) method in an ArF (λ= 193 nm) excimer laser. Subsequently the prepared thin films were annealed at 900°C. Cross sectional transmission electron microscope (TEM) results confirmed that the epitaxial growth of the β-FeSi on the thin films and the crystalline structure was improved after increasing the annealing time 5 to 20 hrs ranges in both process. It was also showed the polycrystalline structure and the thicknesses of the thin films were 80 to 100 nm for FeSi target and 200 to 250nm for Fe target. The TEM result was also confirmed by electron diffraction (ED) method. The intrinsic photoluminescence (PL) intensity of the A-band peak from 20 hrs annealed sample was investigated. We report an application of the thin film with crystalline effect, luminescence characteristics and band structure condition to apply in solar cell and optical fiber communications.
Starting Page	210
Ending Page	213
File Size	1483566
Page Count	4
File Format	PDF
ISBN	9781424462773
e-ISBN	9781424462803
DOI	10.1109/ICELCE.2010.5700665
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-12-18
Publisher Place	Bangladesh
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Films X-ray scattering Time measurement Crystalline effect and PL β-FeSi2 PLD TEM
Content Type	Text
Resource Type	Article

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