NDLI: Use of Parasitic Elements to Optimize the IGBT Commutation Process

Content Provider	IEEE Xplore Digital Library
Author	Cyr, J.-M.
Copyright Year	2015
Description	Author affiliation: TM4 Inc., Boucherville, QC, Canada (Cyr, J.-M.)
Abstract	This paper presents a unique gate driver technology that demonstrates reduction in switching losses based on experimental results. This technology involves the reuse of parasitic elements of a commutation cell as feedback in order to control the dI/dt in the IGBT as well as the dV/dt across it. The Reflex™ gate driver technology, which use the parasitic inductance of the emitter connection of the IGBT to finely controls the dI/dt during the commutation process, has previously been presented in literature by the author [1]. In summary, it has been demonstrated that the fine control of the dI/dt permitted by Reflex™ is an efficient method of controlling overvoltage across the IGBT at its limit of operation without any risk of failure. It also allows the control of the recovery current of the opposite diode that generates EMI noise as well as false turn-ON. In this paper, the principle of duality in power electronics and the fundamental benefits of Reflex™ gate driver technology are combined to become the starting point for development of a system that will enable us to control dV/dt across the IGBT as well. This control, which keeps the IGBT in the linear region, allowThis paper presents a unique gate driver technology that demonstrates reduction in switching losses based on experimental results. This technology involves the reuse of parasitic elements of a commutation cell as feedback in order to control the dI/dt in the IGBT as well as the dV/dt across it. The Reflex™ gate driver technology, which use the parasitic inductance of the emitter connection of the IGBT to finely controls the dI/dt during the commutation process, has previously been presented in literature by the author. In summary, it has been demonstrated that the fine control of the dI/dt permitted by Reflex™ is an efficient method of controlling overvoltage across the IGBT at its limit of operation without any risk of failure. It also allows the control of the recovery current of the opposite diode that generates EMI noise as well as false turn-ON. In this paper, the principle of duality in power electronics and the fundamental benefits of Reflex™ gate driver technology are combined to become the starting point for development of a system that will enable us to control dV/dt across the IGBT as well. This control, which keeps the IGBT in the linear region, allows the Reflex™ gate driver technology to react without any delay, improving the dynamic of the closed loop and allowing an even greater reduction in switching losses.s the Reflex™ gate driver technology to react without any delay, improving the dynamic of the closed loop and allowing an even greater reduction in switching losses.
Starting Page	1
Ending Page	4
File Size	222776
Page Count	4
File Format	PDF
e-ISBN	9781467376372
DOI	10.1109/VPPC.2015.7353036
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-10-19
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Logic gates Voltage control Inductance Switches Switching loss
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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