NDLI: Infrared Analysis Technique for Determining Aluminum-Phosphosilicate Reaction

Content Provider	IEEE Xplore Digital Library
Author	Nanda, M. M. Corl, E. A. Silverman, S. L.
Copyright Year	1966
Description	Author affiliation: IBM Components division, East Fishkill Facility, Hopewell Junction, N. Y. (Nanda, M. M.; Corl, E. A.; Silverman, S. L.)
Abstract	One of the major causes of semiconductor failure is inversion. This condition is frequently caused by the build-up of trapped charges in the vicinity of the silicon/silicon dioxide interface after the devices are reverse-biased at elevated temperatures. Inversion poses a severe reliability exposure, resulting in both junction and transistor leakage. A phosphosilicate layer (P2O5) introduced into the silicon dioxide structure has been found to substantially reduce the silicon dioxide structure has been found to substantially reduce the failure incidence due to inversion. However, aluminum interconnections deposited upon the oxide passivation and, therefore, on the phosphosilicate layer have been found to react chemically with the oxide effectively reducing the phosphosilicate layer. This, in turn, increases the probability of failures by inversion. Reflection infrared spectroscopy has been found to be a practical non-destructive technique in determining phosphosilicate layer thickness on oxidized silicon wafers. Using this technique, experiments have shown that depletion of the phosphosilicate layer occurs because of interaction with aluminum under various times and temperatures. The experiments prove the practical aplicability of this infrared method in the quantitative determination of the depletion of the phosphosilicate layer. The experimental findings discussed in this paper show that the reflection technique can be effectively used in process development and in production control of transistors and diodes utilizing aluminum as interconnection.
Starting Page	83
Ending Page	100
File Size	14634137
Page Count	18
File Format	PDF
ISSN	00972088
DOI	10.1109/IRPS.1966.362358
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1966-11-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen
Content Type	Text
Resource Type	Article

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