NDLI: Liquid Metal Vertical Interconnects for Flip-Chip Assembly of GaAs C-Band Power Amplifiers onto Micro-Rectangular Coaxial Transmission Lines

Content Provider	IEEE Xplore Digital Library
Author	Ralston, P. Oliver, M. Vummidi, K. Raman, S.
Copyright Year	2011
Abstract	Prior work has demonstrated a new process utilizing room temperature liquid metal, galinstan, as an interconnect material for flip chip bonding. This interconnect forms a flexible bond between chips and carriers and therefore a flip chip assembly using this technology is much less susceptible to thermomechanical stresses. This paper applies this concept to interconnect MMIC chips to 3D Polystrata transmission line structures. A prefabricated GaAs MMIC chip is post processed for liquid metal assembly. Measured results show, over the MMIC's 4.9 - 8.5 GHz frequency range, the system's overall reduction in gain of the MMIC is 1.4 dB or 0.7dB per RF transition as compared to direct probing of the MMIC chip.
Starting Page	1
Ending Page	4
File Size	1356639
Page Count	4
File Format	PDF
ISBN	9781612847115
ISSN	15508781
e-ISBN	9781612847122
e-ISBN	9781612847108
DOI	10.1109/CSICS.2011.6062489
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-16
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MMICs Assembly Metals Flip chip Transmission line measurements Gallium arsenide Integrated circuit interconnections
Content Type	Text
Resource Type	Article

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Liquid Metal Vertical Interconnects for Flip-Chip Assembly of GaAs C-Band Power Amplifiers onto Micro-Rectangular Coaxial Transmission Lines