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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Liu, L. Alt, A.R. Benedickter, H. Bolognesi, C.R. |
| Copyright Year | 2011 |
| Abstract | Appropriately designed InP/GaInAs -based pHEMTs with relatively conservative indium channel mole fractions are prime contenders for high-performance low-power dissipation mm-wave MMICs. A clear and distinct advantage of InP -based HEMT technology is that it is long since space-qualified, leveraging decades of InP fabrication and reliability know-how. As a first demonstrator of low-power operation, we demonstrate an X-band low-noise amplifier (LNA) featuring a 9 dB gain and a 1.5 dB noise figure, while operating with a record ultralow 0.6 mW total power dissipation. A second demonstrator MMIC consists of a wideband amplifier delivering 10 dB of gain between 35-82 GHz, with a total power dissipation of 2.59 mW, corresponding to consumption of 8.6 µW per micron of total amplifier gate periphery (or 57% of the lowest power density ever achieved with ABCS HEMTs). Clearly, given consideration to the still conservative x = 68% channel indium mole fraction, much room remains for the ultimate optimization of InP/GaInAs -based conventional HEMTs for low-power dissipation MMICs covering the application spectrum from X- to W- bands. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 467699 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781612847115 |
| ISSN | 15508781 |
| e-ISBN | 9781612847122 |
| e-ISBN | 9781612847108 |
| DOI | 10.1109/CSICS.2011.6062493 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-10-16 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | HEMTs Indium phosphide Gain MMICs Logic gates Power demand Power dissipation |
| Content Type | Text |
| Resource Type | Article |
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