NDLI: Investigation in characteristics of 1200V vertical IGBT for different trench designs

Content Provider	IEEE Xplore Digital Library
Author	Pulikkathodi, A.K. Suresh, V. Shao-Ming Yang Sheu, G.
Copyright Year	2013
Description	Author affiliation: Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan (Pulikkathodi, A.K.; Suresh, V.; Shao-Ming Yang; Sheu, G.)
Abstract	In this paper, we investigate the behavior of 1200V Punch-Through, Trench gate, Field stop (FS) IGBT at various temperatures for different trench widths and depths. MOS-controlled devices with trench gates are the most desirable as their reduced $V_{CE(sat)}$ enables increased conduction current density in high power applications. The paper describes the simulation results of the trench gate IGBT. The effect caused in the I-V characteristics of IGBT by the trench design has been investigated for the first time. The results have been compared with different trench sizes. Technology-computer-aided-design (TCAD) simulations with Sentaurus and analytical solution reveal that the breakdown occurs under the gate. By enlarging the gate length, more freedom for conductivity modulation is provided decreasing the conduction losses. Trench gates provide higher channel density (small cell size) and reduce the JFET resistance in the IGBT structure. It is observed that the variation in trench width and depth affects the breakdown voltage, $V_{CE(sat)}$ and switching characteristics in turn varying the stability of the device. This device design not only reduces the chip size, but also improves current handling capability and latch-up current density.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	1
Ending Page	2
File Size	528111
Page Count	2
File Format	PDF
ISBN	9781467325233
DOI	10.1109/EDSSC.2013.6628146
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-03
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Switches Performance evaluation Logic gates Lead Trench gate 1200V IGBT Trench Gate Field stop
Content Type	Text
Resource Type	Article

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