NDLI: Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

Content Provider	IEEE Xplore Digital Library
Author	Han, C.Y. Leung, C.H. Lai, P.T. Tang, W.M. Che, C.M.
Copyright Year	2013
Description	Author affiliation: Dept. of Appl. Phys., Hong Kong Polytech. Univ., Hong Kong, China (Tang, W.M.) \|\| Dept. of Chem., Univ. of Hong Kong, Hong Kong, China (Che, C.M.) \|\| Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China (Han, C.Y.; Leung, C.H.; Lai, P.T.)
Abstract	Pentacene organic thin-film transistor (OTFT) with high-κ HfTiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 $cm^{2}/V·s.$ Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that $NH_{3}$ annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	1
Ending Page	2
File Size	841125
Page Count	2
File Format	PDF
ISBN	9781467325233
DOI	10.1109/EDSSC.2013.6628118
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-03
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Logic gates Organic thin film transistors Dielectrics Sensors Insulators dielectric OTFT high k HfTiO
Content Type	Text
Resource Type	Article

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