NDLI: Evolution of the native defects in unintentionally doped 4H-SiC during annealing process

Content Provider	IEEE Xplore Digital Library
Author	Ping Cheng Yuming Zhang Yimen Zhang Hui Guo
Copyright Year	2009
Description	Author affiliation: School of Microelectronics, Xidian, University, Xi'an, China (Ping Cheng)
Abstract	With isothermal annealing treatment at 1873K, unintentionally doped 4H-SiC epitaxial layers grown by low-pressure chemical vapor deposition (LPCVD) have been studied using Electron Spin Resonance (ESR) and low temperature photoluminescence (PL). ESR and PL spectra show that the native defects are the mixture of carbon vacancy (V) and its extended point defects. The decrease of key parameter g vector is obtained from ESR spectra with annealing time prolonged. Meanwhile the full width at half maximum (FWHM) becomes wider and the peak shifts from green to yellow luminescence in PL spectra. This phenomenon results from strong interaction among the intrinsic defects during the isothermal annealing process. The interaction of native defects affects the way of native defect combination and then makes the energy level of native defects varied with annealing time changed from 10min to 60min.
Starting Page	322
Ending Page	325
File Size	2959269
Page Count	4
File Format	PDF
ISBN	9781424442973
DOI	10.1109/EDSSC.2009.5394262
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-12-25
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Paramagnetic resonance Silicon carbide Substrates Isothermal processes Chemical vapor deposition Temperature Epitaxial layers Photoluminescence Spectroscopy PL spectrum native defects SI 4H-SiC anneal ESR
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in