NDLI: Capture cross section: A variable duty cycle charge pumping study

Content Provider	IEEE Xplore Digital Library
Author	Matsuda, A. Ryan, J.T. Campbell, J.P. Cheung, K.P.
Copyright Year	2015
Description	Author affiliation: Semicond. & Dimensional Metrol. Div., NIST, Gaithersburg, MD, USA (Matsuda, A.; Ryan, J.T.; Campbell, J.P.; Cheung, K.P.)
Abstract	The performance and reliability of any transistor structure is largely dominated by the presence of interface and/or near interface defects. Monitoring the presence, quantity, and nature of these defects has been the topic of countless research efforts spanning a wide variety of measurement techniques (charge pumping, conductance, etc.). These measurements are very often used to extract defect capture cross section values and, in most cases, assign them as intrinsic properties of the defect [1]-[10]. It is however extremely troubling that the interface state capture cross section values reported for the most basic and well understood material system (Si/SiO2) ranges (Fig. 1) from $10^{-12}$ $cm^{2}-10^{-23}$ $cm^{2}$ [1]-[10]. Considering this unsettlingly broad range of values, it is quite tempting to discount the reported values as mere fitting parameters. In this study we perform a variant on charge pumping (CP), that we call variable duty-cycle charge pumping (VDC-CP) [11] which provides a direct and simple physics interpretation of the interface state capture process while retaining the high sensitivity of conventional CP. The results are interpreted using transition state theory to extract defect energy levels without any assumption of a capture cross section. The extracted energy levels are in excellent agreement with those measured directly using a spectroscopic CP technique, proving the utility of VDC-CP as well as the validity of applying the transition-state theory to measured kinetic data. This successful methodology is then used to explain why capture cross section is not an inherent property of interface defects and does not provide insight into the governing physics of charge capture [12].
Starting Page	1
Ending Page	2
File Size	151688
Page Count	2
File Format	PDF
ISBN	9781479973750
DOI	10.1109/VLSI-TSA.2015.7117555
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-27
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Kinetic theory Energy states Electron traps Charge pumps Logic gates Interface states
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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