NDLI: Size tunable Ge quantum dot phototrasnsistors for optical interconnects with high figure of merits

Content Provider	IEEE Xplore Digital Library
Author	Ming-Hao Kuo Chung-Yen Chien Po-Hsiang Liao Wei-Ting Lai Pei-Wen Li
Copyright Year	2015
Description	Author affiliation: Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan (Ming-Hao Kuo; Chung-Yen Chien; Po-Hsiang Liao; Wei-Ting Lai; Pei-Wen Li)
Abstract	We report a unique, CMOS approach for the inclusion of size-tunable (7-50-nm), spherical Ge quantum dots (QDs) into gate stacks of Si MOS transistors, through selective oxidation of SiGe pillars over the buffer layer of $Si_{3}N_{4}$ on top of the Si substrate. The Ge-QD MOS phototransistors feature extremely low dark current densities $(I_{off}$ ~ 0.27 $pA/μm^{2}),$ high $I_{on}/I_{off}$ $(>10^{6}),$ steep subthreshold swing (~175 mV/dec at 300 K), superior external quantum efficiency (~240%), and fast response time of 1.4ns under illumination of 850 nm, providing a core building block for high-performance Ge optical transducers for on-chip optical switches and transducers for Si-based optical interconnect applications. Most importantly, the detection wavelength of the Ge QD is tunable from near infrared to near ultraviolet by reducing the QD size from 50 to 7 nm, and the optimal photoresponsivity is tailored by the Ge QD size and the effective thickness of gate dielectrics.
Starting Page	1
Ending Page	2
File Size	232233
Page Count	2
File Format	PDF
ISBN	9781479973750
DOI	10.1109/VLSI-TSA.2015.7117552
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-27
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Phototransistors Silicon Logic gates Dielectrics Optical interconnections Oxidation Lighting
Content Type	Text
Resource Type	Article

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