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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wei-Chih Chien Erh-Kun Lai Kuo-Pin Chang Chien-Hung Yeh Ming-Hsiang Hsueh Yeong-Der Yao Tuung Luoh Sheng-Hui Hsieh Yang, T.H. Chen, K.C. Yi-Chou Chen Kuang-Yeu Hsieh Rich Liu Chih-Yuan Lu |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu (Wei-Chih Chien) |
| Abstract | For the first time a unipolar resistance memory with good performance and reliability is demonstrated. A short (20-50 ns) positive pulse switches the $WO_{x}$ film from low resistance state (LRS) to high resistance state (HRS), while a longer (200-500 ns) positive pulse switches the film from HRS to LRS. Negative pulses, on the other hand, do not produce reversible resistivity changes. Despite the low energy switching, both LRS and HRS are very stable, capable of withstanding 2,500 hours of baking at up to 150 degC- Furthermore, the $WO_{x}$ R-RAM can withstand > 1,000 cycles of LRS/HRS switching, and the device is also highly immune to read disturb. This unipolar device is promising for future 3D high-density NVM storage. |
| Starting Page | 144 |
| Ending Page | 145 |
| File Size | 743804 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424416141 |
| ISSN | 1524766X |
| DOI | 10.1109/VTSA.2008.4530838 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-04-21 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Conductivity Reliability engineering Oxidation Switches Nonvolatile memory Voltage Physics Read-write memory Materials science and technology Materials reliability |
| Content Type | Text |
| Resource Type | Article |
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