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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kim, Y.H. Cabral, C. Gusev, E.P. Gignac, L. Gribelyuk, M. Ieong, M. |
| Copyright Year | 2006 |
| Description | Author affiliation: IBM T.J. Watson Res. Center, Yorktown Heights, NY (Kim, Y.H.; Cabral, C.) |
| Abstract | We present fully silicided gate (FUSI) work function modulation and mechanisms using different NiSi alloys as well as different phases $(Ni_{31}Si_{12}$ and $Ni_{rich}-Pt-Si).$ It is shown that the interface layer between gate silicide and dielectric is the key to modulate the work function due to Fermi level pining on HfSiO and $HfO_{2}.$ Ge, Yb, Pt, and Al were fully explored to identify good candidates for N and PFET. A ~400meV work function shift was achieved toward the conduction band edge using NiAlSi demonstrating a mobility of 300 $cm_{2}/Vs$ at peak, matching NiSi control devices on $Hf_{x}SiO_{y}.$ $Ni_{rich}PtSi$ has shown 4.85eV work function and good mobility. Different gate materials were fully explored to understand the mechanism of work function modulation depending on the dielectrics. It was found that the work function of metal rich silicides are strongly dependent on the pure metal work function and it can be changed by controlling the number of metal atoms which are available at the interface |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 2455483 |
| Page Count | 2 |
| File Format | |
| ISBN | 1424401814 |
| ISSN | 1524766X |
| DOI | 10.1109/VTSA.2006.251094 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-04-24 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicides Phase modulation Electrodes Hafnium oxide High-K gate dielectrics Capacitance Channel bank filters Performance loss Conducting materials Dielectric materials |
| Content Type | Text |
| Resource Type | Article |
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