NDLI: Band offset FinFET-based URAM (Unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM

Content Provider	IEEE Xplore Digital Library
Author	Jin-Woo Han Seong-Wan Ryu Sungho Kim Chung-Jin Kim Jae-Hyuk Ahn Sung-Jin Choi Kyu Jin Choi Byung Jin Cho Jin Soo Kim Kwang Hee Kim Gi Sung Lee Jae Sub Oh Myong Ho Song Yun Chang Park Jeoung Woo Kim Yang-Kyu Choi
Copyright Year	2008
Description	Author affiliation: EECS, KAIST, Daejeon (Jin-Woo Han; Seong-Wan Ryu; Sungho Kim; Chung-Jin Kim; Jae-Hyuk Ahn; Sung-Jin Choi)
Abstract	A FinFET-based unified-RAM (URAM) using the band offset of Si/SiC is demonstrated for the fusion of a non-volatile memory (NVM) and capacitorless 1T-DRAM operation. An oxide/nitride/oxide (O/N/O) gate dielectric and a floating body caused by the band offset are combined in a bulk FinFET to allow two memory operations in a single transistor. The device is fabricated on an epitaxially grown Si/SiC substrate and its process is fully compatible with a conventional bulk FinFET SONOS. Highly reliable NVM and high speed 1T-DRAM operation are confirmed in a single URAM cell.
Starting Page	200
Ending Page	201
File Size	532048
Page Count	2
File Format	PDF
ISBN	9781424418022
DOI	10.1109/VLSIT.2008.4588618
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Silicon carbide Substrates Logic gates Nonvolatile memory Impact ionization Epitaxial growth
Content Type	Text
Resource Type	Article

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Band offset FinFET-based URAM (Unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM