NDLI: A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

Content Provider	IEEE Xplore Digital Library
Author	Zamdmer, N. Jonghae Kim Trzcinski, R. Plouchart, J.-O. Narasimha, S. Khare, M. Wagner, L. Chaloux, S.
Copyright Year	2003
Description	Author affiliation: Dev. Center, IBM Semicond. Res., Hopewell Junction, NY, USA (Zamdmer, N.; Jonghae Kim; Trzcinski, R.; Plouchart, J.-O.; Narasimha, S.; Khare, M.; Wagner, L.; Chaloux, S.)
Abstract	SOI CMOS technology offers low parasitic junction capacitance, and therefore provides speed and power enhancements to digital applications compared to bulk CMOS. It is also emerging as a good candidate for high-performance SoC, with integratable RF circuits that operate beyond 30-GHz already demonstrated at the 130-nm technology node. The digital aspects of the base 90-nm SOI technology were previously reported. This paper presents the RF performance of this technology, and shows that the capabilities of CMOS technology are expanding into the millimeter-wave regime.
Starting Page	98
Ending Page	99
File Size	164769
Page Count	2
File Format	PDF
ISBN	0780382897
DOI	10.1109/VLSIT.2004.1345415
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology CMOS digital integrated circuits Millimeter wave circuits Millimeter wave technology Radio frequency Millimeter wave measurements Integrated circuit technology Parasitic capacitance Varactors Performance evaluation
Content Type	Text
Resource Type	Article

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A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power mm-wave digital and RF circuit capability

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A 243-GHz F/sub t/ and 208-GHz F/sub max/, 90-nm SOI CMOS SoC technology with low-power millimeter-wave digital and RF circuit capability

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