NDLI: Activation of electrically silent defects in the high-k gate stacks

Content Provider	IEEE Xplore Digital Library
Author	Veksler, D. Bersuker, G. Watkins, M.B. Shluger, A.
Copyright Year	2014
Description	Author affiliation: Univ. Coll. London, London, UK (Watkins, M.B.; Shluger, A.) \|\| SEMATECH, Albany, NY, USA (Veksler, D.; Bersuker, G.)
Abstract	We investigate a possibility that changes of electrical characteristics of the nFETs high-k gate stacks under moderate voltage stresses are induced primarily by a reversible activation of the pre-existing defects rather than generation of new structural defects. These electrically silent pre-cursor defects become responsible for measured stress-induced instabilities of transistor parameters after activation. It is demonstrated that the experimental stress time dependency of the threshold voltage, leakage current, charge pumping (CP) current can be reproduced, considering trap activation/deactivation as a multi-phonon assisted electron capture/emission. Ab initio simulations, employed to identify the atomic configuration of these pre-cursor defects, point to the oxygen vacancies in a region of the $SiO_{2}$ interfacial layer adjacent to the $HfO_{2}$ film as potential candidates.
File Size	1013609
File Format	PDF
ISBN	9781479933174
ISSN	19381891
DOI	10.1109/IRPS.2014.6860663
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Hafnium compounds Electron traps Silicon Logic gates Stress measurement Lattices High-k gate stack Charge Pumping SILC PBTI Defects
Content Type	Text
Resource Type	Article

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