NDLI: Failure Mechanisms in Pulsed RF Power Transistors

Content Provider	IEEE Xplore Digital Library
Author	Soukup, R. J. Collingwood, L. A.
Copyright Year	1975
Description	Author affiliation: Component Engineering, Collins Radio Group/Rockwell International, Cedar Rapids, Iowa 52406 (Collingwood, L. A.) \|\| Division of Information Engineering, The University of Iowa, Iowa City, Iowa 52242 (Soukup, R. J.)
Abstract	Reliability life tests of rf power transistors during pre-production evaluation of advanced design avionics distance measuring equipment (DME) have revealed two primary failure mechanisms affecting the transistors used in this 1 GHz pulse power application. The mechanisms are: 1. dissolution of silicon in aluminum, with subsequent hillock formation in the emitter metallization, and 2. aluminum grain swelling, both mechanisms resulting in base-emitter degradation. These results have been verified by SEN and electrical tests based on rf pulse power life tests on the DME equipment and from failures in field test environments. Several corrective measures have been implemented by semiconductor manufacturers as a consequence of aluminum electromigration failures in preliminary carrier wave (CW) life tests. Additional corrective measures on these devices were necessary to eliminate the failure mechanisms seen in the 1 GHz pulse power environment to which these transistors were subjected. A recent 5000 hour pulse power life test substantiates that degradation has not occurred in transistors incorporating the design corrections.
Starting Page	174
Ending Page	181
File Size	8305836
Page Count	8
File Format	PDF
ISSN	07350791
DOI	10.1109/IRPS.1975.362692
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-04-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Failure analysis Radio frequency Power transistors Life testing Pulse measurements Aluminum Power measurement Degradation Aerospace electronics Silicon
Content Type	Text
Resource Type	Article

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