NDLI: Sodium Ions at Defect Sites at SiO2/Si Interfaces as Determined by X-Ray Photoelectron Spectroscopy

Content Provider	IEEE Xplore Digital Library
Author	Grunthaner, F. J. Maserjian, J.
Copyright Year	1975
Description	Author affiliation: Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91103 (Grunthaner, F. J.; Maserjian, J.)
Abstract	X-ray photoelectron spectroscopy (XPS) is described in its application as a probe for studying defects such as sodium in SiO2 films. A general description is given of key experimental methods in XPS. New techniques are described for applying and monitoring a fixed bias at the surface of the oxide during the XPS measurement. These methods are shown capable of detecting extremely small Na and Cu concentrations in undoped samples (< 1011 cm¿2). In deliberately Na-doped samples, five spectral peaks are distinctly observed and related to different defect states at the vacuum/SiO2 and SiO2/Si interfaces. By applying a bias-temperature stress during the XPS measurements, these peaks change in relative intensity and can be related to the motion of the Na+ ions between different states occurring at the two interfaces. An attempt is made to correlate the observations with previously reported models.
Starting Page	15
Ending Page	25
File Size	13241258
Page Count	11
File Format	PDF
ISSN	07350791
DOI	10.1109/IRPS.1975.362671
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-04-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Spectroscopy Contamination Electron traps Temperature Monitoring Oxidation Silicon Pollution measurement Stress Annealing
Content Type	Text
Resource Type	Article

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