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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Philbrick, J. W. DiStefano, T. H. |
| Copyright Year | 1975 |
| Description | Author affiliation: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (DiStefano, T. H.) || IBM System Products Division, East Fishkll, Hopewell Junction, New York 12533 (Philbrick, J. W.) |
| Abstract | A scanned surface photovoltage (SSP) method is capable of detecting a wide variety of defects in a silicon surface. This method can be used to scan a large area of the silicon surface, which is coupled by a surface channel to a small remote electrode. The resolution obtained, about 2 ¿m, is explained theoretically in this paper for the case of a differentiated photovoltage signal and a small (0.8 ¿m diameter) light beam from an optimized optical system. SSP images of a variety of defects, both naturally occurring and induced, were obtained along with images produced by other methods for comparison. |
| Starting Page | 159 |
| Ending Page | 167 |
| File Size | 10458206 |
| Page Count | 9 |
| File Format | |
| ISSN | 07350791 |
| DOI | 10.1109/IRPS.1975.362690 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1975-04-01 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon P-n junctions Electrodes Signal resolution Radiative recombination Pulse measurements Area measurement Length measurement Particle measurements Leak detection |
| Content Type | Text |
| Resource Type | Article |
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