NDLI: Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs

Content Provider	IEEE Xplore Digital Library
Author	Chou, Y.C. Leung, D. Lai, R. Grundbacher, R. Eng, D. Scarpulla, J. Barsky, M. Liu, P.H. Biedenbender, M. Oki, A. Streit, D.
Copyright Year	2002
Description	Author affiliation: TRW Space & Electron., Microelectron. Products & Processes, Redondo Beach, CA, USA (Chou, Y.C.; Leung, D.; Lai, R.; Grundbacher, R.; Eng, D.; Scarpulla, J.; Barsky, M.; Liu, P.H.; Biedenbender, M.; Oki, A.; Streit, D.)
Abstract	The evolution of DC and microwave degradation induced by three-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs was investigated. Reliability investigations were performed on monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.1 /spl mu/m T-gate pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs. Operating at accelerated life test conditions, MMIC amplifiers were lifetested at three-temperatures (T/sub 1/=255/spl deg/C, T/sub 2/=270/spl deg/C and T/sub 3/=285/spl deg/C for 0.1 /spl mu/m GaAs PHEMT; T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C for 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT). High reliability performance with \| /spl Delta/S21 \| > 1.0 dB as the failure criteria was achieved on both technologies. From the 3-temperature lifetest, while GaAs PHEMT MMICs have activation energy of 1.7 eV, InGaAs/InAlAs/InP HEMT MMICs exhibit the activation energy of 2 eV. The difference is due to the distinct degradation mechanisms, which cause the S21 degradation. For GaAs PHEMTs, S21 degradation is mainly induced by the gradual gate metal sinking through the high-temperature lifetest; on the other hand, for InGaAs/InAlAs/InP HEMTs, the increase of access resistance on the source and drain regions causes the S21 degradation. Nevertheless, MTTF at T/sub channel/=125/spl deg/C of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs is higher than 1/spl times/10/sup 8/ hours. This is state-of-the-art of reliability performance reported on both technologies. From this study, the understanding of degradation evolution leads to the different approaches to improving the high-temperature reliability performance on pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs.
Sponsorship	IEEE Electron Devices Soc. IEEE Reliability Soc
Starting Page	241
Ending Page	247
File Size	523750
Page Count	7
File Format	PDF
ISBN	0780373529
DOI	10.1109/RELPHY.2002.996643
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-04-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Degradation Acceleration Gallium arsenide Indium gallium arsenide Indium compounds Indium phosphide HEMTs MMICs PHEMTs
Content Type	Text
Resource Type	Article

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