NDLI: Physical analysis of Ti-migration in 33 /spl Aring/ gate oxide breakdown

Content Provider	IEEE Xplore Digital Library
Author	Pey, K.L. Tung, C.H. Lin, W.H. Radhakrishnan, M.K.
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore (Pey, K.L.)
Abstract	Abnormal titanium migration in the poly-Si gate and transistor channel near the source/drain extension was discovered in Ti-silicided 0.18 /spl times/ 0.40 /spl mu/m/sup 2/ MOSFETs after constant voltage stress of 5.1 V at 100/spl deg/C during gate dielectric breakdown study. Coupled with a soft breakdown event, lateral titanium migration from the source/drain active Si regions and titanium downward protrusion within the poly-Si gate take place. This leads to a Ti-silicide migration induced enhanced junction leakage and a degraded transistor performance. Even though the transistor still functions electrically, this new degradation phenomenon may lead to early failure in the device, posing a reliability concern. We postulate that the abnormal titanium migration was triggered by an enhanced localized current density induced through the breakdown spot in the gate dielectric, leading to an extraordinary titanium migration due to the presence of the high magnitude of electrical driving force. We call this new mechanism dielectric breakdown induced-silicide migration (DBIM). A similar phenomenon has not been observed so far in cobalt-silicided 0.15 /spl mu/m transistor fabricated with 25 /spl Aring/ gate oxide.
Sponsorship	IEEE Electron Devices Soc. IEEE Reliability Soc
Starting Page	210
Ending Page	215
File Size	533457
Page Count	6
File Format	PDF
ISBN	0780373529
DOI	10.1109/RELPHY.2002.996638
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-04-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric breakdown Substrates Oxidation Rapid thermal annealing Breakdown voltage Stress Dielectric breakdown Energy resolution MOSFET circuits Failure analysis
Content Type	Text
Resource Type	Article

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