NDLI: RF performance of 28nm PolySiON and HKMG CMOS devices

Content Provider	IEEE Xplore Digital Library
Author	Chew, K.W.J. Agshikar, A. Wiatr, M. Jen Shuang Wong Wai Heng Chow Zhihong Liu Ting Huang Lee Jinglin Shi Suh Fei Lim Sundaram, K. Chan, L.H.K. Cheng, C.H.M. Sassiat, N. Yong Koo Yoo Balijepalli, A. Kumta, A. Chi Dong Nguyen Illgen, R. Mathew, A. Schippel, C. Romanescu, A. Watts, J. Harame, D.
Copyright Year	2015
Description	Author affiliation: GlobalFoundries, Dresden, Germany (Agshikar, A.; Wiatr, M.; Sassiat, N.; Chi Dong Nguyen; Illgen, R.; Mathew, A.; Schippel, C.; Romanescu, A.) \|\| GlobalFoundries, Malta, NY, USA (Balijepalli, A.; Kumta, A.; Watts, J.; Harame, D.) \|\| GlobalFoundries, Singapore, Singapore (Chew, K.W.J.; Jen Shuang Wong; Wai Heng Chow; Zhihong Liu; Ting Huang Lee; Jinglin Shi; Suh Fei Lim; Sundaram, K.; Chan, L.H.K.; Cheng, C.H.M.; Yong Koo Yoo)
Abstract	The impact of scaling in advanced RF/MS-CMOS has been extensively discussed but there has not been a publication that compares the RF characteristics of 28nm high-K metal gate HKMG and PolySiON technologies fabricated in the same facility. In this work, we show that HKMG improves transistor $f_{T}$ and increases varactor tunning range. However, it can actually decrease $f_{max}.$ We examine how process features made to optimize cost and digital performance impact the RF performance. Process features which improve DC current and gm, including HKMG also give higher $f_{T}.$ However, $f_{max}$ is sensitive to gate resistance and PolySiON has an advantage here.
Starting Page	43
Ending Page	46
File Size	2574165
Page Count	4
File Format	PDF
e-ISBN	9781479976423
DOI	10.1109/RFIC.2015.7337700
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Radio frequency Q-factor MOS devices Solids Capacitance Transistors 28nm CMOS High-K metal gate PolySiON RF
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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