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Content Provider | IEEE Xplore Digital Library |
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Author | Tayrani, R. |
Copyright Year | 2007 |
Description | Author affiliation: Raytheon Space & Airborne Syst., El Segundo (Tayrani, R.) |
Abstract | This paper introduces a new highly efficient broadband monolithic class-E power amplifier utilizing a single 0.25 um times 800 um AlGaN/GaN field-plated HEMT producing 8 W/mm of power at 10.0 GHz. The HPA utilizes a novel distributed broadband class-E load topology to maintain a simultaneous high PAE and output Power over (6-12 GHz). The HPA's peak PAE and output power performance measured under three pulsed drain voltages at 7.5 GHz are: (67%, 36.8 dBm @ 20 V), (64%, 37.8 dBm @ 25 V) and (58%, 38.3 dBm @ 30 V). The new broadband load also provides a spectrally pure output power response under CW and pulsed modulated RF input conditions. The HPA spurious free performance is evident from its low AM and PM noise figures of <-125 dBc at 10 KHz from carrier and <-130 dBc at 15 KHz from 10 GHz respectively. To the best of our knowledge, this is the highest ever reported performance for a high power, 6-12 GHz GaN class-E power amplifier. |
Starting Page | 581 |
Ending Page | 584 |
File Size | 517759 |
Page Count | 4 |
File Format | |
ISBN | 1424405300 |
ISSN | 15292517 |
DOI | 10.1109/RFIC.2007.380951 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2007-06-03 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Gallium nitride High power amplifiers Power generation Pulse measurements Pulse modulation Broadband amplifiers Aluminum gallium nitride HEMTs Topology Power amplifiers Avionics radar technology Broadband Class E amplifiers GaN monolithic power amplifiers high efficiency amplifiers Broadband class-E load |
Content Type | Text |
Resource Type | Article |
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