NDLI: A fully integrated 1 V, +9.5 dBm, 43%-PAE injection-locked Class-E power amplifier for wireless sensor network

Content Provider	IEEE Xplore Digital Library
Author	Hyoung-Seok Oh Taeksang Song Sang-Hyun Baek Euisik Yoon Choong-Ki Kim
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea (Hyoung-Seok Oh; Taeksang Song; Sang-Hyun Baek)
Abstract	In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10 dBm at 2.4 GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not only the output power stage, but also the driver stage needs to be co-optimized for low power operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18 /spl mu/m CMOS technology, achieves a power added efficiency (PAE) of 43% while delivering an output power of 9.5 dBm with a drain efficiency (DE) of 48.5% at 1 V supply voltage.
Starting Page	235
Ending Page	238
File Size	1368594
Page Count	4
File Format	PDF
ISBN	0780394127
DOI	10.1109/RWS.2006.1615138
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power amplifiers Wireless sensor networks Transmitters Injection-locked oscillators CMOS technology Energy consumption Preamplifiers Power generation Transceivers Frequency shift keying
Content Type	Text
Resource Type	Article

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