NDLI: High-power picosecond current switching by silicon diode using tunneling-assisted impact ionization front

Content Provider	IEEE Xplore Digital Library
Author	Rukin, S. Lyubutin, S. Slovikovsky, B. Tsyranov, S.
Copyright Year	2009
Description	Author affiliation: Institute of Electrophysics Russian Academy of Sciences, 106 Amundsen St., Ekaterinburg, 620016, Russia (Rukin, S.; Lyubutin, S.; Slovikovsky, B.; Tsyranov, S.)
Abstract	New principle of high-power ultrafast current switching based on tunneling-assisted impact ionization front in silicon diode structures has been experimentally implemented and theoretically studied. A voltage pulse with amplitude of 180 kV and a front duration of 400 ps was applied to a semiconductor device containing 44 series connected silicon diode structures located in a 50-Ω transmission line. Due to sharp nonuniformity of the applied voltage distribution across the length of the device the switching process presents a successive breakdown of the series connected structures. Each successive structure breaks down with a shorter time interval as the electro-magnetic shockwave builds. The current switching by the individual structure takes around 30 to 50 ps, and is initiated at electric field of about 1 MV/cm in the vicinity of the p-n junction, where tunneling ionization of the silicon begins. At such conditions the rise time of the output voltage wave is determined by the switching time and inductance of a few last structures and can be less than 100 ps to a peak voltage over 100 kV. In experiments in 50-Ω transmission line we have obtained 150-kV output pulses having 80 to 100 ps rise time. The maximum current and voltage rise rates are record for semiconductor switches and amount to 30 kA/ns and 1.5 MV/ns, respectively.
Starting Page	287
Ending Page	291
File Size	420992
Page Count	5
File Format	PDF
ISBN	9781424440641
DOI	10.1109/PPC.2009.5386302
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-28
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Impact ionization Semiconductor diodes Transmission line theory Breakdown voltage Semiconductor devices P-n junctions Tunneling Inductance Switches
Content Type	Text
Resource Type	Article

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