NDLI: Sub-microsecond pulse switching characteristics of a 4500-V IEGT

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Sub-microsecond pulse switching characteristics of a 4500-V IEGT

Content Provider	IEEE Xplore Digital Library
Author	Okamura, K. Nakajima, N. Souda, M. Endo, F. Matsuda, H. Kaneko, E.
Copyright Year	1998
Description	Author affiliation: Toshiba Corp., Tokyo, Japan (Okamura, K.)
Abstract	The short pulse (pulse width <=1 /spl mu/s) switching characteristics of a newly developed semiconductor switch device, the 4500 V IEGT, have been investigated. Test results show that switching efficiency for pulse widths of 200 ns, 500 ns and 1000 ns were 65%, 80%, and 90%, respectively. Furthermore, the short recovery time of less than 20 /spl mu/s showed that the IEGT is adequate for high repetition rate applications. It is concluded that the IEGT is one of the most promising devices for pulsed power uses.
Starting Page	123
Ending Page	126
File Size	303980
Page Count	4
File Format	PDF
ISBN	0780342445
ISSN	10768467
DOI	10.1109/MODSYM.1998.741208
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Switches Circuit testing Space vector pulse width modulation Engineering profession Insulated gate bipolar transistors Voltage Switching circuits Switching loss Temperature Thyristors
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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