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Content Provider | IEEE Xplore Digital Library |
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Author | Tsuchiya, T. |
Copyright Year | 2005 |
Description | Author affiliation: Dept. of Micro Eng., Kyoto Univ., Japan (Tsuchiya, T.) |
Abstract | This paper describes tensile testing of thin films, such as single crystal silicon, polysilicon, silicon dioxide, silicon nitride, and metals. These films are used as mechanical structures in MEMS devices, which are strongly requested to evaluate their reliability before they become products. Thin film tensile tester equipped with an electrostatic grip system has been developed in order to test specimen that has same dimensions and was fabricated by the same process as those of application devices. Various properties have been revealed using the tester, such as fracture origin investigated from the statistical analysis, fracture mechanism from the environmental effect on strength, and strength of nanometer thick films. |
Sponsorship | Korean Sensors Soc |
Starting Page | 1953 |
Ending Page | 1956 |
File Size | 769883 |
Page Count | 4 |
File Format | |
ISBN | 0780389948 |
DOI | 10.1109/SENSOR.2005.1497482 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2005-06-05 |
Publisher Place | South Korea |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Materials testing Micromechanical devices System testing Crystalline materials Semiconductor thin films Silicon compounds Microelectromechanical devices Thin film devices Electrostatics Mechanical factors |
Content Type | Text |
Resource Type | Article |
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