NDLI: Degradation of the Poly-Si/Silicide Structure in Advanced MOS-Technologies

Content Provider	IEEE Xplore Digital Library
Author	Lippens, P. Maex, K. Van den Hove, L. De Keersmaecker, R. Probst, V. Koppenolc, W. van der Weg, W.
Copyright Year	1988
Description	Author affiliation: Department of Atomic and Interface Physics Utrecht State University, PO Box 80000, NL-3508 TA Utrecht, The Netherlands (Koppenolc, W.; van der Weg, W.) \|\| Siemens AG, Central Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F. R. G. (Probst, V.) \|\| Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, B-3030 Heverlee, Belgium (Lippens, P.; Maex, K.; Van den Hove, L.; De Keersmaecker, R.)
Abstract	The interaction in the system poly-Si on TiSi on Si and in the polycide system both with CoSi and TiSi is investigated when subjected to furnace heat treatments at high temperature. It will be shown that the first system suffers from instability due to SPE-regrowth which is partially avoided by doping the poly-Si. The polycide system shows severe roughening of the TiSi. However, in the case of CoSi, the degradation is more pronounced, viz. the Co is detected all over the poly-Si layer and this can hardly be suppressed by doping of the CoSi-layer.
File Size	2212299
File Format	PDF
ISBN	2868830994
ISSN	04491947
DOI	10.1051/jphyscol:1988439
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-09-13
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Les Editions de Physique
Subject Keyword	Degradation Silicides Temperature Heat treatment Furnaces Doping Hafnium Physics Microelectronics Research and development
Content Type	Text
Resource Type	Article
Subject	Engineering

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DEGRADATION OF THE POLY-Si/SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES

Suppression of NBTI-induced VMIN shifts using hafnium doping to gate poly/SiON interface and optimized NiPt process for 40nm node SRAM cell

Strained silicon NMOS with nickel-silicide metal gate

Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/

Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination

Novel elevated silicide source/drain (ESSOD) by load-lock LPCVD-Si and advanced silicidation processing

The selective growth of a single phase calcium silicide film in the Ca—Si system by R.F. magnetron sputtering

Experiments and modeling of boron segregation in As implanted Si during annealing

The effect of ILD material and BPSG densification anneal on the device characteristics

Degradation of the Poly-Si/Silicide Structure in Advanced MOS-Technologies

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DEGRADATION OF THE POLY-Si/SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES

Suppression of NBTI-induced VMIN shifts using hafnium doping to gate poly/SiON interface and optimized NiPt process for 40nm node SRAM cell

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Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/

Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination

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The selective growth of a single phase calcium silicide film in the Ca—Si system by R.F. magnetron sputtering

Experiments and modeling of boron segregation in As implanted Si during annealing

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Degradation of the Poly-Si/Silicide Structure in Advanced MOS-Technologies