NDLI: Rapid Thermal Processing of Arsenic-Implanted Polysilicon on Very Thin Oxide

Content Provider	IEEE Xplore Digital Library
Author	Sun, J.Y.-C. Angelucci, R. Wong, C.Y Scilla, G. Landi, E.
Copyright Year	1988
Description	Author affiliation: IBM Research Division, Thomas J. Watson Research Center, PO Box 218, Yorktown Heights NY 10598, U.S.A. (Sun, J.Y.-C.; Angelucci, R.; Wong, C.Y; Scilla, G.) \|\| CNR-LAMEL Institute, I-40126 Bologna, Italy (Landi, E.)
Abstract	We demonstrated the feasibility and advantages of using rapid thermal annealing (RTA) to achieve a proper work-function for arsenic-implanted polysilicon gate on 7 nm SiO in a dual work function $(n^{+}$ and $p^{+})$ poly-gate CMOS process. Interface states and fixed oxide charge due to RTA can be annealed out at 500°C in forming gas. Time-zero and time-dependent breakdown results show that the integrity of 7 nm gate oxide can be preserved after RTA. The diffusivity of arsenic in polysilicon under RTA is found to be consistent with literature data from conventional furnace anneals.
File Size	1591968
File Format	PDF
ISBN	2868830994
ISSN	04491947
DOI	10.1051/jphyscol:1988484
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-09-13
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Les Editions de Physique
Subject Keyword	Rapid thermal processing CMOS process Furnaces Rapid thermal annealing Interface states Electric breakdown Ion implantation Atmospheric measurements Breakdown voltage Current measurement
Content Type	Text
Resource Type	Article
Subject	Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE

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