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Content Provider | IEEE Xplore Digital Library |
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Author | Ahlgren, D. C. Sunderland, D. A. Gilbert, M. M. Greenberg, D. R. Jeng, S.-J. Malinowski, J. C. Nguyen-Ngoc, D. Stein, K. J. Harame, D. L. Meyerson, B. |
Copyright Year | 1996 |
Description | Author affiliation: IBM Research Division, Yorktown Heights, NY. (Meyerson, B.) || IBM Microelectronics Division, Hopewell Junction, NY. (Ahlgren, D. C.; Sunderland, D. A.; Gilbert, M. M.; Greenberg, D. R.; Jeng, S.-J.; Malinowski, J. C.; Nguyen-Ngoc, D.; Stein, K. J; Harame, D. L.) |
Abstract | This review presents the fundamentals of IBM's epi-base SiGe Heterojunction Bipolar Transistor (HBT) technology which is optimized for use in high performance analog and mixed signal applications. SiGe HBT device design, optimization, and integration into a manufacturable technology with 12 support devices is discussed. We will review circuits which have been fabricated in this technology operating at up to 23 GHz. This demonstrates the extension of this technology into a performance range not previously thought possible in silicon. |
Starting Page | 453 |
Ending Page | 460 |
File Size | 818590 |
Page Count | 8 |
File Format | |
ISBN | 286332196X |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 1996-09-09 |
Publisher Place | Italy |
Access Restriction | Subscribed |
Rights Holder | Editions Frontieres |
Subject Keyword | Heterojunction bipolar transistors Silicon germanium Germanium silicon alloys Bipolar transistors Frequency III-V semiconductor materials Current density Microelectronics Design optimization Manufacturing |
Content Type | Text |
Resource Type | Article |
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