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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fawaz, Hussein Thiery, Jean-Francois Nluyen, Linh Delos, Elisabet Salmer, Georges |
| Copyright Year | 1996 |
| Description | Author affiliation: PICOGIGA, 5 Rue de la Réunion, Z. A. De Courtaboeuf, 91940 Les Ulis, FRANCE (Nluyen, Linh) || Institut D'Electronique et de Microelectronique du Nord (IEMN), Avenue Poincaré, B.P. 69, 59652 Villeneuve d'Ascq, FRANCE (Fawaz, Hussein; Thiery, Jean-Francois; Delos, Elisabet; Salmer, Georges) |
| Abstract | A self aligned complementary HIGFET technology has been developed for high speed/low power digital applications. The process uses 9 lithographic steps including two level of interconnect metal. Typical transconductances of 290 mS/mm and 65 mS/mm are acheived on 1pm gate length N and P-channel devices respectively. These devices show promisefor incorporation in complementary digtal circuits. |
| Starting Page | 869 |
| Ending Page | 872 |
| File Size | 1021566 |
| Page Count | 4 |
| File Format | |
| ISBN | 286332196X |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-09-09 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Editions Frontieres |
| Subject Keyword | Implants Gold Ohmic contacts Gallium arsenide Lithography Voltage Circuits Transistors Performance evaluation Current measurement |
| Content Type | Text |
| Resource Type | Article |
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