NDLI: Evaluation of strain-induced mobility variation in TiN metal gate SOI n-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Guillaume, T. Mouis, M. Maitrejean, S. Poncet, A. Vinet, M. Deleonibus, S.
Copyright Year	2004
Description	Author affiliation: UMR no. 5130, IMEP, Grenoble, France (Guillaume, T.; Mouis, M.)
Abstract	In this paper, the influence of the strain induced by a TiN metal gate in the channel of n-MOS SOI transistors is investigated. Mechanical simulation has been used to calculate the strain components, which are found to show strong variations near the gate edge and a rather constant level under the gate. The influence on electron mobility has been calculated using the deformation potential theory, in its general formulation, as channel strain is neither purely biaxial nor uniaxial. It is found that electron mobility is more degraded by TiN-induced strain as the gate length becomes smaller. However, this degradation can be maintained below 10% for a [110]-oriented channel, provided that the residual stress in the 10 nm TiN layer is smaller than about 2.5 GPa.
Starting Page	393
Ending Page	396
File Size	305127
Page Count	4
File Format	PDF
ISBN	0780384784
DOI	10.1109/ESSDER.2004.1356572
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-23
Publisher Place	Belgium
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Tin MOSFET circuits Residual stresses Capacitive sensors Thermal stresses Silicon Degradation Electron mobility Doping Thermal expansion
Content Type	Text
Resource Type	Article

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